• Description


The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application and intended for any application with low gate charge drive.
  • Exceptional dv/dt capability
  • Avalanche tested
  • Drain to source voltage (Vds) of 60V
  • Gate to source voltage of ±15V
  • Continuous drain current (Id) of 60A
  • Power dissipation (Pd) of 110W
  • Low on state resistance of 12mohm at Vgs 10V
  • Operating junction temperature range from -65°C to 175°C


Power Management, Consumer Electronics, Portable Devices, Industrial

Product details

Power Dissipation Pd 110W
Operating Temperature Max 175°C
Continuous Drain Current Id 60A
Transistor Polarity N Channel
No. of Pins 3Pins
Threshold Voltage Vgs 1V
Product Range
Automotive Qualification Standard
Drain Source Voltage Vds 60V
Rds(on) Test Voltage Vgs 10V
Transistor Case Style TO-220
On Resistance Rds(on) 0.014ohm

Other details

Part Number STP60NF06L
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India
Product Change Notice EN Download technical document - datasheet - Tanotis India